Large Spin Hall Magnetoresistance And Its Correlation

06.09.2022

(PDF) Large spin Hall magnetoresistance and its correlation to the.
Large spin Hall magnetoresistance and its correlation to the spin.
Theory of spin Hall magnetoresistance (SMR) and related... - Europe PMC.
Anomalous Hall magnetoresistance in metastable... - AIP Publishing.
PDF MAGNETORESISTANCE PHENOMENA AND RELATED EFFECTS - MAGNETISM.
[PDF] Spin Hall magnetoresistance in antiferromagnet... - Semantic Scholar.
[1505.00899] Large spin Hall magnetoresistance and its.
Giant Magnetoresistance - an overview | ScienceDirect Topics.
Magnetoresistance - an overview | ScienceDirect Topics.
Sign reversal of magnetoresistance and inverse spin Hall effect in.
Spin Hall Effect | SpringerLink.
PDF Large of magnetoresistance thin - Brown University.
‪Byong Guk Park‬ - ‪Google Scholar‬.

(PDF) Large spin Hall magnetoresistance and its correlation to the.

(a) High resolution TEM image of the Pt/MnPSe3 bilayer cross-section, revealing a ~2-nm-thick granular layer interposing between the Van der Waals compound and the Pt film. The inset shows the. The observed correlation between SMR/SHAHE and magnetization indicates that the field-induced magnetization plays a significant role in the spin transport at the Pt/GGG interface. Our microscopic theory well explains the SMR signals as a function of magnetic fields and quantifies the microscopic spin exchange parameters at the Pt/GGG interface. Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin-Hall effect (spin current generation) and inverse spin-Hall effect (spin current detection). Here, we undertake current, magnetic field, crystallography dependent magnetoresistance and magneto thermal.

Large spin Hall magnetoresistance and its correlation to the spin.

Spin current represents a flow of spin angular momentum carried by electrons. The spin Hall effect allows electrical generation of spin current in materials with strong spin-orbit interaction (SOI) ().The spin Hall angle, a material parameter that characterizes charge to spin conversion efficiency, scales with the longitudinal resistivity and the spin Hall conductivity (). It is also interesting to check whether the physics of the GMR effect has anything to do with the mechanism of interlayer exchange coupling. From the general idea of spin-channel switching (see Fig. 1) and from the experimental data shown in Fig. 2, it follows that to achieve an effective switching of the spin channels one needs only antiparallel magnetic configurations, while the way this. Physical origin of the AMR: spin-orbit interaction effect: λL.S ⇒⇒⇒⇒It is expected to be large only in systems with large spin-orbit interaction and anisotropic charge distribution 1) It was shown in magnetoresistance measurements of rare-earth-doped gold that the AMR was large in all cases except for Gd, with L=0 (Gd +3 ⇒4f 7).

Theory of spin Hall magnetoresistance (SMR) and related... - Europe PMC.

Dimensional-confinement effect coupled with a large surface-induced spin-Gipping cross section. The EHE exhibits a strong correlation with GMR, which is likely due to the surface-induced spin-orbit interaction. Since the discovery of giant magnetoresistance (GMR) in layered structures, we have witnessed a series of de-velopments in the. Therefore, the SSC is most important, and the three-spin correlation without SOC should dominate over the two-spin correlation with SOC. One another possibility for the large Hall response observed in MnGe films is the emergence of high-mobility carriers in the FM region, which can result in σ x y with a sharp peak structure, as typically.

Anomalous Hall magnetoresistance in metastable... - AIP Publishing.

This confirms that the SMR and spin-orbit torques are closely correlated. Results Spin Hall magnetoresistance We first present the measurement of the longitudinal ( Rxx) and transverse resistances. The U.S. Department of Energy's Office of Scientific and Technical Information. Anomalous Hall magnetoresistance (AHMR) in single ferromagnetic layers arises from anomalous Hall effect induced spin current and its backflow. Here, we have studied the correlation between AHMR and weak ferromagnetism as well as the antiferromagnetic property in metastable FeMn layers.

PDF MAGNETORESISTANCE PHENOMENA AND RELATED EFFECTS - MAGNETISM.

Here we report that the spin Hall magnetoresistance of Ta/NiFe bilayers is negative, necessitating an additional interconversion process. Our theory shows that the interconversion owing to. The U.S. Department of Energy's Office of Scientific and Technical Information. We have studied the spin Hall magnetoresistance (SMR), the magnetoresistance within the plane transverse to the current flow, of Pt/Co bilayers. We find that the SMR increases with increasing Co thickness: the effective spin Hall angle for bilayers with thick Co exceeds the reported values of Pt when a conventional drift-diffusion model is used.

[PDF] Spin Hall magnetoresistance in antiferromagnet... - Semantic Scholar.

In this relation, is defined as the spin Hall angle, which describes the efficiency of the spin-to-charge conversion process, namely conversion from the injected spin current into charge current [ 24 ]. Recent studies have found that n-type and p-type doped GaAs semiconductors show ISHE response with opposite sign [ 23 ]. Last but not least, the spin Hall magnetoresistance (SMR) is also an effect that allows to investigate and quantify the spin Hall angle from magnetotransport experiments. As shown in Fig. 7.4 a, b, when the transverse boundary conditions are changed from an open spin circuit to a closed spin circuit, the longitudinal resistance of the NM is. Anomalous Hall magnetoresistance (AHMR) in single ferromagnetic layers arises from anomalous Hall effect induced spin current and its backflow. Here, we have studied the correlation between AHMR and… 2 PDF Physical origins of the magnetoresistance of platinum in contact with polycrystalline antiferromagnetic NiO M. Gamino, D. S. Maior, +4 authors.

[1505.00899] Large spin Hall magnetoresistance and its.

Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures S Cho, SC Baek, KD Lee, Y Jo, BG Park Scientific reports 5 (1), 1-9 , 2015. Spin Hall magnetoresistance is one of many ways in which the electrical resistance of a material is influenced by the spin Hall effect. An electron moving through a conductor is scattered by the spin Hall effect in a direction determined by its spin orientation which induces a net accumulation of spin at the conductors edge. The spin Hall magnetoresistance (SMR) in W/CoFeB/MgO structure.: (a) Schematic illustration of SMR, based on the interaction of the spin current induced by the spin Hall effect with magnetization.

Giant Magnetoresistance - an overview | ScienceDirect Topics.

The report of a systematic study of the magnetoresistance of w/cofeb/mgo structures and its correlation with the current-induced torque to the magnetization demonstrates that mr in a non-magnet/ferromagnet structure can be utilized to understand other closely correlated spin-orbit coupling effects such as the inverse spin hall effect or. The large magnetoresistance effect of Sn-doped InSb single-crystal thin film is now used practically. The magnetoresistance effect is small at small magnetic flux densities. The magnetoresistance effect is proportional to the magnetic field change at larger magnetic flux densities, as shown in Figure 31.32. We observe that the MR is independent of the angle between the magnetization and current direction but is determined by the relative magnetization orientation with respect to the spin direction accumulated by the spin Hall effect, for which the symmetry is identical to that of so-called the spin Hall magnetoresistance.

Magnetoresistance - an overview | ScienceDirect Topics.

The development of spintronics as a major eld of research in the 1980s was prompted by the discovery of the giant magnetoresistance e ect, allowing for e cient spin-dependent transport[6]. Over time, spintronics has evolved from the study of spin polarized currents to pure spin currents.

Sign reversal of magnetoresistance and inverse spin Hall effect in.

The magnetoresistance (MR) is the ratio of the electrical resistance of a material with and without an applied magnetic field [ 20 ]. In ferromagnetic conductors the MR is often dominated by effects that are not caused directly by the applied magnetic field, but rather by the magnetization orientation as controlled by the applied field. Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures Soonha Cho, Seung-heon Chris Baek, Younghun Jo, Byong-Guk Park (Submitted on 5 May 2015). The associated angular momentum transfer to the ferromagnetic layer and thereby the electrical resistance is modulated by the angle between the applied current and the magnetization direction. The SMR provides a convenient tool to non-invasively measure the magnetization direction and spin-transfer torque to an insulator.

Spin Hall Effect | SpringerLink.

Title: Large spin Hall magnetoresistance and its correlation to the spin-orbit torque in W/CoFeB/MgO structures. Authors: Soonha Cho, Seung-heon Chris Baek, Younghun Jo,.